ECE350

Semiconductor Electronic Devices

Winter 2026

Interactive Notebooks

Crystal Structures
Introduction to crystal structures, lattices, Miller indices, and semiconductor materials
Lectures 2-3
Energy Bands
Bloch's theorem, Kronig-Penney model, and E-k diagrams with interactive visualizations
Lectures 6-7
Effective Mass
Effective mass concept, band diagrams in 3D, and direct vs. indirect bandgap semiconductors
Lectures 8-9
Carriers at Thermal Equilibrium
Density of states, Fermi-Dirac distribution, carrier concentrations
Lectures 9, 10, 11
Carrier Drift
Drift velocity, mobility, scattering mechanisms, velocity saturation, and Hall effect
Lecture 12
Band Bending and Electrostatics
Energy band bending
Lecture 13
Diffusion
Diffusion, built-in fields, Einstein's relation
Lecture 13
Generation, Recombination & Quasi-Fermi Levels
Excess carriers, carrier lifetime, quasi-Fermi levels, and injection levels
Lecture 14
Continuity Equation
Continuity equation, diffusion length, steady-state carrier diffusion, and drift-diffusion animation
Lecture 15
PN Junction Electrostatics (equilibrium)
Built-in potential, depletion layer width, charge density -> electric field -> potential
Lecture 17
PN Junction under Reverse Bias
Electrostatics, junction capacitance, breakdown
Lecture 18
PN Junction I–V Characteristics
Shockley diode equation, minority carrier diffusion, temperature dependence
Lectures 19–21
PN Junction: Approximations and Non-Idealities
One-sided junctions, short diode, ideality factor, SCR current, high injection, series resistance
Lectures 21–22
PN Junction: Small-Signal Models
Small-signal analysis, junction and diffusion capacitance, conductance, impedance vs. frequency
Lecture 22
PN Junction: Light Absorption
Optical absorption, photovoltaic effect, solar cell I-V, short-circuit current, open-circuit voltage
Lecture 23
BJT Current-Voltage Relations
Minority carrier profiles, collector/emitter/base currents, current gain, Early effect, Gummel plot, Ebers-Moll model
Lectures 25–26
Metal-Semiconductor Interfaces
Schottky diodes, ohmic contacts, energy band diagrams, electrostatics, IV characteristics, and tunneling junctions
Lectures 27–28
MOS Capacitor: Energy Bands & Electrostatics
Ideal MOS structure, regimes of operation, threshold condition, electrostatics, energy bands
Lectures 29–30
MOS Capacitor: C-V Characteristics
Charge distributions, dQ location, low-frequency vs. high-frequency inversion, interactive C-V explorer, 1/C² analysis
Lecture 31
MOS Capacitor: Non-Idealities
Work function mismatch, oxide charges, poly-gate depletion, inversion charge thickness, interface traps, interactive C-V with non-idealities, parameter extraction from C-V
Lecture 32
MOSFET: Introduction & Operation
MOSFET structure, CMOS, regions of operation, interactive IV explorer, threshold voltage extraction
Lecture 33
MOSFET IDS–VDS: Derivation and Modifications
Square-law IV derivation, body effect, velocity saturation, parasitic resistance, channel length modulation, subthreshold conduction, DIBL
Lecture 34